FDN306P
Part Number: FDN306P
Manufacturer: ON Semiconductor
Shipped from: Singapore/HK Warehouse
Stock Available: Check with us
The FDN306P is a P-channel MOSFET transistor designed for low-voltage, high-speed switching applications. It is part of the Fairchild Semiconductor (now ON Semiconductor) family of MOSFETs, known for their compact size, low on-resistance, and high efficiency. The FDN306P is commonly used in power management, load switching, and battery protection circuits.
Manufacturer:
The FDN306P is manufactured by:
- ON Semiconductor (formerly Fairchild Semiconductor)
Specifications:
| Parameter | Value |
|---|---|
| Drain-Source Voltage (Vds) | -20V |
| Gate-Source Voltage (Vgs) | ±8V |
| Continuous Drain Current (Id) | -2.7A (at Vgs = -4.5V) |
| Pulsed Drain Current (Idm) | -10A |
| On-Resistance (Rds(on)) | 70 mΩ (typical) at Vgs = -4.5V |
| Power Dissipation (Pd) | 1.6W |
| Operating Temperature | -55°C to +150°C |
| Package Type | SOT-23 (3-pin) |
| Threshold Voltage (Vgs(th)) | -0.8V to -2.5V |
| Input Capacitance (Ciss) | 300 pF (typical) |
| Output Capacitance (Coss) | 90 pF (typical) |
| Reverse Transfer Capacitance (Crss) | 40 pF (typical) |
Features:
- Low On-Resistance (Rds(on)): Typically 70 mΩ at Vgs = -4.5V, ensuring minimal power loss and high efficiency.
- High-Speed Switching: Optimized for fast switching applications, making it suitable for high-frequency circuits.
- Compact Package: Available in a small SOT-23 package, which is ideal for space-constrained applications.
- Low Threshold Voltage: Allows for operation with low gate drive voltages, making it compatible with low-voltage logic circuits.
- High Current Handling: Capable of handling continuous drain currents up to -2.7A and pulsed currents up to -10A.
- Wide Temperature Range: Operates reliably over a temperature range of -55°C to +150°C.
- ESD Protection: Provides protection against electrostatic discharge, enhancing reliability in sensitive applications.
Applications:
- Power Management: Used in DC-DC converters, voltage regulators, and power distribution systems.
- Load Switching: Commonly employed in load switching circuits to control power to various components.
- Battery Protection: Used in battery management systems to protect against over-current, over-voltage, and reverse polarity conditions.
- Portable Devices: Ideal for use in portable electronics such as smartphones, tablets, and laptops due to its compact size and low power consumption.
- Motor Control: Used in motor drive circuits for controlling small motors in consumer electronics and industrial applications.
- Signal Switching: Employed in signal routing and multiplexing circuits where high-speed switching is required.
- LED Drivers: Used in LED driver circuits to control the power supply to LEDs efficiently.
Package Type:
- SOT-23 (3-pin): Small Outline Transistor package with 3 pins, designed for surface-mount applications.
Typical Application Circuit:
The FDN306P is often used in a simple switch configuration where the gate is controlled by a logic signal to turn the MOSFET on or off. In a typical application, the source is connected to the power supply, the drain is connected to the load, and the gate is driven by a microcontroller or logic circuit. A pull-down resistor is usually added to the gate to ensure the MOSFET turns off when the control signal is low.
Conclusion:
The FDN306P is a highly efficient and compact P-channel MOSFET that is well-suited for a wide range of low-voltage, high-speed switching applications. Its low on-resistance, high current handling capability, and small form factor make it an excellent choice for power management, load switching, and battery protection circuits in portable and space-constrained devices.